Peripheral circuitry under array memory device and method of fabricating thereof

ABSTRACT

A semiconductor device and method of forming thereof that includes a transistor of a peripheral circuit on a substrate. A first interconnect structure such as a first access line is formed over the transistor. A via extends above the first access line. A plurality of memory cell structures is formed over the interconnect structure and the via. A second interconnect structure, such as a second access line, is formed over the memory cell structure. The first access line is coupled to a first memory cell of the plurality of memory cell structures and second access line is coupled to a second memory cell of the plurality of memory cell structures.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No.62/739,004, filed Sep. 28, 2018, hereby incorporated by reference in itsentirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. Such scaling down has also increased the complexity ofprocessing and manufacturing ICs and, for these advancements to berealized, similar developments in IC processing and manufacturing areneeded.

One type of device targeted for increased capacity and integration arememory devices. A reduction in memory device cell design has led tochallenges in interconnect structure providing access and operation tothese memory device cells. Further, the peripheral devices used toaccess these memory device cells have been targeted for improvements inintegration.

Therefore, although conventional semiconductor devices have beengenerally adequate for their intended purposes, they are notsatisfactory in every respect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a diagrammatic illustration of a semiconductor deviceincluding an array of memory cells according to one or more aspects ofthe present disclosure;

FIG. 2 is a cross-sectional illustration of an embodiment of asemiconductor device illustrating an interconnection from a peripheralcircuit to the memory cells of the array according to one or moreaspects of the present disclosure;

FIG. 3 is a flow chart illustrating an embodiment of a method offabricating a semiconductor device according to one or more aspects ofthe present disclosure;

FIGS. 4, 5A, 6A, 7A, 8A, 9A, 10A, 11A, 12A, 12B, 13A, 13B, 14A, 14B,15A, 15B, 16A, and 16B are cross-sectional views of an embodiment of asemiconductor memory device fabricated according to one or more steps ofthe method of FIG. 3; and

FIGS. 5B, 6B, 7B, 11B, 12C, 13C, 14C, 15C, and 16C are corresponding topviews of an embodiment of a semiconductor device corresponding to thesemiconductor memory device fabricated according to one or more steps ofthe method of FIG. 3.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Still further, when a number or a range of numbers is described with“about,” “approximate,” and the like, the term is intended to encompassnumbers that are within a reasonable range including the numberdescribed, such as within +/−10% of the number described or other valuesas understood by person skilled in the art. For example, the term “about5 nm” encompasses the dimension range from 4.5 nm to 5.5 nm.

Referring now to FIG. 1, illustrated is a diagrammatic view of asemiconductor device 100. The semiconductor device 100 is asemiconductor memory device as it includes a plurality of memory cellsoperable to perform as storage devices. The semiconductor device 100includes a memory cell array region 102, associated peripheral circuitregion 104, each of which are formed on a substrate 106.

The peripheral circuit region 104 may include components (e.g.,semiconductor devices) for driving the devices of the memory cell arrayregion 102. The peripheral circuit region 104 may include variousdevices operable to access and/or control the memory cell array region(e.g., to perform read/write/erase operations). The devices includen-type FET devices and p-FET devices. The devices may be configured asplanar transistors or multi-gate transistors such as fin-type multi-gatetransistors referred to herein as FinFET devices. Such a FinFET devicemay include a P-type metal-oxide-semiconductor FinFET device or anN-type metal-oxide-semiconductor FinFET device. The FinFET device may bea dual-gate device, tri-gate device, bulk device, silicon-on-insulator(SOI) device, and/or other configuration. One of ordinary skill mayrecognize other embodiments of semiconductor devices that may also beapplied in the peripheral circuitry region including for examplegate-all-around (GAA) devices, Omega-gate (Ω-gate) devices, or Pi-gate(H-gate) devices.

The memory cell array region 102 includes a plurality of arrays ofmemory cells, which are illustrated for reference as array 102A andarray 102B. Each of the memory arrays may include a plurality of memorycells operable for storage, the cells of an array may be arranged in arow/column configuration. In an embodiment, the memory cells are flashmemory cells. In a further embodiment, the memory cells are NOR typeflash memory cells. In some embodiments, the memory cell arrays 102Aand/or 102B include stackable memory cells, vertically arranged in anarray format. While flash memory cells are provided as an exemplarydevice herein, other types of devices may also benefit from thedisclosure including, for example EEPROM cells. In an embodiment,input-output pads (not shown) are disposed on an upper surface of thesemiconductor device 100 (e.g., opposed to substrate 106).

In some embodiments, the semiconductor device 100 may be referred to asa peripheral circuit under memory array (PUA) device. The PUA deviceconfiguration may provide an increase in memory density. For example,the increase may be evident in comparison to a configuration positioninga peripheral circuit adjacent (e.g., side-by-side) with the memory cellarrays. In contrast to the “side-by-side” configuration, the PUA deviceallows the memory cells to be formed at least partially vertically abovethe peripheral circuitry. Thus, as illustrated in FIG. 1, the memorycell array region 102 is disposed above the peripheral circuit region104. For example, the peripheral circuit 104 interposes the memory cellarray region 102 and the substrate 106.

The design and implementation of the interconnection between the memorycell array region 102 and the peripheral circuit region 104 in aperipheral circuit under array configuration however can be challenging.For example, the conductive line/via routing between the memory cellarray region 102 and the peripheral circuit region 104 must beaddressed. FIG. 2 provides an illustration of such a routing design.

Referring to FIG. 2, illustrated is a device 200 that, similar to asdiscussed above with reference to the device 100 in FIG. 1 includes aperipheral circuit region 104 and an overlying memory cell array region102. The device 200 is a PUA device. The device 200 further illustratesa first, or lower, interconnect region 202. The lower interconnectregion 202 may be a multi-layer interconnect (MLI) used to connect thedevices of the peripheral circuit region 104 with one another. The MLIof the lower interconnect region 202 may also be used to connect thedevices of the peripheral circuit region 104 with devices (e.g., cellsand components thereof) of the memory cell array region 102. The MLI ofthe interconnect region 202 includes a plurality of metal lines (e.g.,providing horizontal routing) 204 interconnected by a plurality ofcontacts or vias (e.g., providing vertical routing) 206. The metal lines204 and vias 206 may be surrounded with dielectric material 208 such asinter layer dielectric (ILD layers), etch stop layers (ESL), and thelike.

The metal lines 204 and the vias 206 may include conductive materialsuch as tungsten (W), molybdenum (Mo), titanium (Ti), cobalt (Co),tantalum (Ta), nickel (Ni), polysilicon, aluminum (Al), copper (Cu),silicides, nitrides, and/or other suitable conductive materials arrangedin one or more layers. The dielectric materials 208 may includematerials such as tetraethylorthosilicate (TEOS) oxide, un-dopedsilicate glass, or doped silicon oxide such as borophosphosilicate glass(BPSG), fused silica glass (FSG), phosphosilicate glass (PSG), borondoped silicon glass (BSG), and/or other suitable dielectric materialsincluding those typically used for ILD layers. The dielectric materials208 may also include a silicon nitride layer, silicon oxide layer, asilicon oxynitride layer, and/or other suitable dielectric materialsincluding those typically used for ESLs. The dielectric materials may bedeposited by a PECVD process or other suitable deposition technique.

Specifically illustrated in the lower interconnect region 202 is a metalline 204A, which may be an uppermost or top metal line of the MLI. In anembodiment, the metal line 204A is a conductive line operable to accessmemory cells of the memory cell array region 102. Thus, the metal line204A may be referred to herein as an “access line.” The metal line 204Ais an access line providing electrical connection to one or more memorycells in the memory cell array region 102. Exemplary memory cells of thememory cell array region 102 are discussed below. In an embodiment, themetal line 204A is an access line providing a word line (WL) foraccessing memory cells of the array region 102. In an embodiment, themetal line 204A is an access line providing a bit line (BL) foraccessing memory cells of the array region 102.

As illustrated in the device 200, the memory cell array region 102includes a plurality of memory cells or storage cells, which are labeled208A-208K for ease of reference. The memory cells 208A-208K areillustrative of a plurality of memory cells arranged in a row/columnconfiguration that in some embodiments together operate as a singlememory array (e.g., 102A of FIG. 1) in the memory cell array region 102.The memory cells 208A-208K may be one or more of various types of memorycells including those that form FLASH memory devices (e.g., NAND or NORtype), SRAM memory devices, DRAM memory devices, and/or other suitablememory types. It is noted that each of the illustrated “cells” 208A-208Kmay be a vertically configured stack of multiple memory cells. Forexample, the illustrated memory cell 208A may be illustrative of a stackof multiple memory cells each sharing, for example, a gate line that isconnected to the access line 204A.

The access line—metal line 204A—may be interconnected to a firstgrouping of the memory cells, as illustrated by the interconnection ofthe metal line 204A with each of cells 208B, 208D, 208F, 208H, or 208Jby way of the vias 206A. FIG. 2 illustrates a single metal line 204Ainterconnected to each of cells 208B, 208D, 208F, 208H, or 208J througha respective via 206A. However, it is understood that there may be aplurality of metal lines, including those substantially planar with themetal layer 204A (e.g., at the same metallization level as metal layer204A), that are interconnected to memory cells 208B, 208D, 208F, 208H,or 208J or other cells of the array to provide the access linefunctionality similar to that of the metal layer 204A. For example, atop view of the device 400 is illustrated below and would apply to thatof the device 200. In some embodiments, the metal line 204A, or a linecoplanar therewith, is interconnected to every other verticallyextending column of memory cells of the memory cell array.

Above the memory cell array region 102 are additional interconnectfeatures of a top interconnect region 210. The top interconnect region210 may be formed above the memory cells 208A-208J, in other words,further from the substrate 106. In an embodiment, the top interconnectregion 210 includes a metal line 204B that is interconnected to a secondset or portion of the memory cells, as illustrated by theinterconnection to cells 208A, 208C, 208E, 208G, 208I, and 208K. Themetal line 204B may be interconnected to each of cells 208A, 208C, 208E,208G, 208I, and 208K through a respective via 206B. Again, a singlemetal line 204B is illustrated in the cross-sectional view of FIG. 2 asinterconnected to each of cells 208A, 208C, 208E, 208G, 208I, and 208Kthrough a respective via 206B. However, it is understood that there maybe a plurality of metal lines, such as those substantially planar withthe metal layer 204B, that are interconnected to memory cells 208A,208C, 208E, 208G, 208I, and 208K or other cells of the array to providethe access line functionality similar to that of the metal layer 204B.For example, top views of the device 400 is illustrated below and wouldapply to that of the device 200. In some embodiments, the metal line204B is interconnected to every other vertically extending column ofmemory cells of the memory cell array. For example, the illustratedmemory cell 208B may be illustrative of a stack of multiple memory cellseach sharing, for example, a gate line that is connected to the accessline 204B. The top interconnect region 210 may also include a pluralityof additional metal lines, vias, input-output (I/O) pads, etc. (notshown) that may be also interposed by dielectric material. Thedielectric material of the top interconnect region 210 may besubstantially similar to the dielectric materials of the interconnectregion 202.

In an embodiment, the metal line 204B has a same function as the metalline 204A, merely providing the functionality to a second set ratherthan first set of the memory cells 208. In an embodiment, the metal line204B is an access line providing a word line (WL). In an embodiment, themetal line 204B is an access line providing a bit line (BL) to the cell.That is, in some embodiments, the gate pick-up of the devices of thememory array are performed either by interconnection to one of the metalline 204B or the metal line 204A.

The routing illustrated in FIG. 2 may be advantageous in that it canavoid having all interconnection of the access lines (e.g., gatepick-ups) through a top of the memory array (e.g., towards to the I/Opads), which would degrade memory cell scalability. That is, the pitchrequired for interconnection of the access lines (e.g., gate pick-ups)in the device 200 is defined by half of the interconnections with thememory cells (e.g., gate pick-ups) of the array being done at top regionand the other half of the interconnections with the memory cells (e.g.,gate pick-ups) being done at a bottom region of the array allows forimproved scalability of the array. Additionally, the device of FIG. 2may be fabricated in a manner such that it avoids the need for veryhigh-aspect ratio, non-self-aligned etching to open up connections to abottom interconnection for example, by the implementation of one or moresteps of the method 300 of FIG. 3. For example, certain embodiments ofthe method 300 provide for vias (e.g., 206A) providing an interconnectto the bottom access lines to be formed prior to the memory cell arrayregion 102.

The interconnection region 202 or portions thereof between theperipheral circuit region 104 and the memory cell array region 102 maybe referred to as an interposer. The interposer may include all orportions of, for example, the MLI of the interconnect region 202 such asvias 206A and/or the metal line 204A. Thus, various aspects of thepresent disclosure provide an interposer formation method before thememory array process to provide benefits, in some embodiments, one ormore of (1) simplifying process integration flow, (2) relaxinginterconnect (e.g., metal) pitch requirements, and/or (3) improvingmemory performance. In an embodiment, the devices and methods providedherein may improve bandwidth (BW) for memory devices such as 3D flashmemory.

Referring now to FIG. 3, illustrated is a method 300 that provides forfabricating a semiconductor memory device having a peripheral circuitryregion underlying a memory cell array region according to one or moreaspects of the present disclosure. The method 300 may be used tofabricate the device 100 or the device 200, as discussed above withreference to FIGS. 1 and 2 respectively. FIGS. 4, 5, 6A, 7A, 8, 9, 10,11A, 12A, 12B, 13A, 13B, 14A, 14B, 15A, 15B, 16A, and 16B providecross-sectional views of an embodiment of a device 400 corresponding toone more steps of the method 300 of FIG. 3. FIGS. 5B, 6B, 7B, 11B, 12C,13C, 14C, 15C, and 16C provide top views of an embodiment of the device400 corresponding to one more steps of the method 300 of FIG. 3. It isnoted that the device 400 is exemplary with respect to, for example, theconfiguration of memory cells and the type of memory cells, and themethod 300 may equally apply to other embodiments including other memorycell types. The device 400 provides a flash memory device and inparticular, vertically stacked flash memory devices. However, otherdevice types may also benefit from the present disclosure.

The method 300 begins at block 302 where a substrate is provided.Referring to the example of FIG. 4, a substrate 402 is provided. Thesubstrate 402 may be substantially similar to the substrate 106discussed above. In some embodiments, the substrate 402 may be asemiconductor substrate such as a silicon substrate. The substrate 402may include various layers, including conductive or insulating layersformed on a semiconductor substrate. The substrate 402 may includevarious doping configurations depending on design requirements as isknown in the art. For example, different doping profiles (e.g., N wells,P wells) may be formed on the substrate 402 in regions designed fordifferent device types. The different doping profiles may include ionimplantation of dopants and/or diffusion processes. The substrate 402typically has isolation features (e.g., shallow trench isolation (STI)features) including those isolation features interposing the regionsproviding different device types. STI features 402A are illustrated inFIG. 4. The substrate 402 may additionally or alternatively (e.g., tothe silicon discussed above) include other semiconductors such asgermanium, silicon carbide (SiC), silicon germanium (SiGe), or diamond.Alternatively, the substrate 402 may include a compound semiconductorand/or an alloy semiconductor. Further, the substrate 402 may optionallyinclude an epitaxial layer (epi-layer), may be strained for performanceenhancement, may include a silicon-on-insulator (SOI) structure, and/orhave other suitable enhancement features.

The method 300 then proceeds to block 304 where peripheral circuitscomponents are formed on the substrate. The formation of the peripheralcircuits may include devices making up a control circuit for operatingan array of memory cells such as an array of NAND-type memory cells asdiscussed below including peripheral circuitry such as devices forassisting read/write/erase functionality of the memory cells includingbut not limited to voltage boost circuitry, page buffer circuitry,column decoder, row decoder, error correction circuitry, write assistcircuitry, interface circuitry including for interfacing between typesof memory cells, bus control circuitry, and the like. The peripheralcircuits may be formed of MOS transistors. The MOS transistors may bep-type MOS transistors (PMOS) or n-type MOS transistors (NMOS). The MOStransistors may be planar type transistors, fin-type transistors (e.g.,FinFETs), and/or other transistor configurations including as discussedabove.

Referring to the example of FIG. 4, a first peripheral device 404 and asecond peripheral device 406 are formed on the substrate 402. In anembodiment, the first peripheral device 404 is one of a NMOS transistoror PMOS transistor and the second peripheral device 406 is the other oneof an NMOS transistor or PMOS transistor. While only two peripheraldevices are illustrated, it is understood that typically hundreds,thousands, or many more devices may be used to form the peripheralcircuit. Each peripheral device 404 and 406 includes a gate structure408 interposing source/drain regions 410.

The gate structures 408 may include a gate dielectric layer andoverlying gate electrode layer. In some embodiments, the gate dielectriclayer(s) include an interfacial layer of dielectric material such assilicon oxide (SiO₂), HfSiO, or silicon oxynitride (SiON). Theinterfacial layer may be formed by chemical oxidation, thermaloxidation, atomic layer deposition (ALD), chemical vapor deposition(CVD), and/or other suitable method. In some embodiments, the gatedielectric layer(s) include high-K gate dielectric layer of high-Kdielectric materials such as hafnium oxide (HfO₂), TiO₂, HfZrO, Ta₂O₃,HfSiO₄, ZrO₂, ZrSiO₂, LaO, AlO, ZrO, TiO, Ta₂O₅, Y₂O₃, SrTiO₃ (STO),BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO, HfSiO, LaSiO, AlSiO, HfTaO, HfTiO,(Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄, oxynitrides (SiON), combinationsthereof, or other suitable material. The high-K gate dielectric layermay be formed by ALD, physical vapor deposition (PVD), CVD, oxidation,and/or other suitable methods. The gate electrode layer(s) may includepolysilicon, a metal, metal alloy, or metal silicide and overlie thegate dielectric layer(s). The gate electrode layer(s) may include asingle layer or alternatively a multi-layer structure, such as variouscombinations of a metal layer with a selected work function to enhancethe device performance (work function metal layer), a liner layer, awetting layer, an adhesion layer, a fill layer, and/or other suitablelayers. By way of example, compositions that may be present in the gateelectrode layer(s) include polysilicon, Ti, Ag, Al, TiAlN, TaC, TaCN,TaSiN, Mn, Zr, TiN, TaN, Ru, Mo, Al, WN, Cu, W, Re, Ir, Co, Ni, othersuitable metal materials or a combination thereof. In variousembodiments, the gate electrode layer(s) may be formed by ALD, PVD, CVD,e-beam evaporation, or other suitable process. Further, the gatestructures may be formed separately for N-FET and P-FET transistorswhich may use different gate electrode layers.

The source/drain regions 410 may be regions of the substrate 402suitably doped to provide the functionality of the associated device ormay be epitaxially grown features on the substrate 402 that are likewisesuitably doped for the given device type (e.g., n-type or p-type).

The method 300 then proceeds to block 304 where a multi-layerinterconnect (MLI) is formed over and coupled to the peripheral circuitcomponents. The multi-layer interconnect can serve to interconnectdevices of the peripheral circuit, as well as interconnect theperipheral circuit with an overlying memory array. As such, portions ofthe MLI may be referred to as providing an interposer. The multi-layerinterconnect of block 304 may be substantially similar to as discussedabove with respect to bottom interconnect region 202

Referring to the example of FIG. 4, a multi-layer interconnect 414 (MLI414) is formed over the substrate 402. Contact structures 412 are shownto the source/drain regions 410 of each of the first and secondperipheral devices 404 and 406. It is noted however, other contacts maybe formed to the gate structures 408 (not shown). The contact structures412 may include suitable materials such as tungsten, silicide, and/orother conductive materials. The contact structures 412 may have amulti-layer structure including, for example, liner layers, seed layers,adhesion layers, barrier layers, and the like.

The MLI 414 formed over the first peripheral device 404 and the secondperipheral device 406 also includes a plurality of metal layers 416 andvias 420. (It is noted that the metal layers 416 and vias 420 areexemplary only and any number of layers and configuration of linestherein may be provided.) The MLI 414 may be substantially similar tothe interconnect region 202, discussed above with reference to FIG. 2.The MLI 414 may interconnect the first peripheral device 404 and thesecond peripheral device 406. The MLI 414 also may interconnect one ormore of the first peripheral device 404 and the second peripheral device406 with an overlying memory cell(s), as discussed below.

The metal layers 416 and vias 420 may include suitable conductivematerials such as polysilicon, copper, tungsten, silicide, aluminum,titanium (Ti), cobalt (Co), molybdenum (Mo), tantalum (Ta), nickel (Ni),silicides of these materials, nitrides of these materials, and/or othersuitable conductive materials. The metal layers 416 and vias 420 mayinclude a multi-layer structure including, for example, liner layers,seed layers, adhesion layers, barrier layers, and the like.

In some embodiments, the block 306 includes forming a top metal layer ofthe MLI. The top metal layer may provide metal lines that provide ahorizontal routing for a signal or signals produced by the circuits ofthe peripheral devices. In the embodiment of FIG. 4, the top metal layer416A provides metal lines that give a horizontal routing for a signalsuch as from peripheral devices 404, 406. In an embodiment, the topmetal layer 416A may provide an access line for one or more cells of thememory cell array. In an embodiment, the access line, routed on metallayer 416A, provides one or more word lines (WL) for accessing a memorycell array (discussed below). In an embodiment, the access line, routedon metal layer 416A, and provides one or more bit lines (BL) foraccessing a memory cell array (discussed below). It is noted thatwhether the access line routed on metal layer 416A is a word line or abit line is dependent on the desired configuration of the cells, wherethe functionality of the other one of the word line or bit line isprovided, for example, within the stacks 702 of the memory device (e.g.,by horizontal routing of conductive layers (e.g., metal, poly,conductively doped regions 706, etc.). As illustrated by the top view ofFIG. 5B, the top metal layer 416A may include a plurality ofhorizontally extending metal lines each spaced at a pitch Y from oneanother.

In some embodiments, a dielectric layer is formed over the top metallayer. The dielectric layer may be an interlayer dielectric layer (ILD).Referring to the example of FIG. 4, an ILD layer 418 is formed over thetop metal layer 416A. The ILD layer 418 may include materials such astetraethylorthosilicate (TEOS) oxide, un-doped silicate glass, or dopedsilicon oxide such as borophosphosilicate glass (BPSG), fused silicaglass (FSG), phosphosilicate glass (PSG), boron doped silicon glass(BSG), and/or other suitable dielectric materials. The dielectricmaterials may be deposited by a PECVD process or other suitabledeposition technique. In some embodiments, the ILD layer 418 alsoincludes an etch stop layer, for example formed above or interfacing themetal layer 416A. The etch stop material may include a silicon nitridelayer, silicon oxide layer, a silicon oxynitride layer. and/or othersuitable dielectric materials.

The method of claim 300 then proceeds to block 308 where conductive viasare formed above and connected to the top metal layer. The vias may beformed to each metal line of the top metal layer. The vias may be filledwith suitable conductive materials such as tungsten. In an embodiment,the vias are formed by patterning the dielectric material overlying thetop metal line. In some embodiments, the patterning includes aphotolithography process that provides for forming a photoresist layer(resist) overlying the dielectric layer, exposing the resist to apattern, performing post-exposure bake processes, and developing theresist to form a masking element including the resist. In someembodiments, patterning the resist to form the making element may beperformed using an electron beam (e-beam) lithography process. Themasking element may then be used to protect regions of the dielectricwhile an etch process forms recesses into the dielectric layer accordingto the pattern of vias to be formed, thereby leaving openings in thedielectric layer. The recesses may be etched using a dry etch (e.g.,chemical oxide removal), a wet etch, and/or other suitable processes.The recesses may then be filled with conductive material to form thevias. In some embodiments, a chemical mechanical planarization (CMP)process is performed after deposition of the conductive material toprovide a top surface of the vias substantially planar with a topsurface of the dielectric layer.

Referring to the example of FIGS. 5A and 5B, vias 420 are formedextending through the ILD layer 418 to the metal layer 416A. Asillustrated by the top view of FIG. 5B, the vias 420 are aligned overeach metal line of the top metal layer 416A. In an embodiment, memorycells of the device 400 have a Y-pitch between access lines ofneighboring cells and an X-pitch between access lines of neighboringcells. In an embodiment, the Y-pitch is defined by the WL pitch betweencells. In an embodiment, the X-pitch is defined by the BL pitch betweencells. As illustrated in FIG. 5B the vias 420 are configured as having aY-pitch and 2*X-pitch (or being disposed at every other BL).

In an embodiment, the vias 420 have a dimension L in the x-axisdirection and a dimension w in the y-axis direction. The dimension L andthe dimension w may be substantially similar. In an embodiment, thedimension L is 0.2 to 0.8 the pitch of bit lines associated with thememory cell array (X-pitch) disposed above the vias 420 (and discussedbelow). In an embodiment, the vias 420 have a dimension w of 0.2 to 0.8the pitch of the word lines (WL) associated with the memory cell array(Y-pitch) disposed above the vias 420. For example, the vias 420 mayhave a dimension in the y-axis direction of 0.2 to 0.8 the pitch of thelines of the metal layer 416A illustrated in FIG. 5B. The pitch of thevias 420 may be substantially equal to the Y-pitch—e.g., WL pitch of thememory cell array disposed above the vias 420. The pitch of the vias 420in the x-direction is 2 times the X-pitch—e.g., twice the BL pitch ofthe memory cell array disposed above the vias 420. This relaxed pitch inthe x-direction is due to the configuration of half of the cells beingconfigured to connect to the access line (e.g., WL) of the top metallayer 416A (e.g., bottom WL) and half of the cells being configured toconnect to the metal layer 1602 (discussed below).

The method 300 then proceeds to block 310 where a capping layer isformed over the vias formed in block 308 discussed above. The cappinglayer may be a dielectric material layer. Examples of dielectricmaterial include SiOC, AlOx, AlN, SiN, SiO₂ or combinations thereof. Thecapping layer may be deposited as a conformal layer. In an embodiment,the capping layer is deposited by PECVD or other suitable depositionmethod. Exemplary thicknesses of the capping layer are between 3˜100 nm.The thickness of the capping layer may be determined by the number ofmemory cells disposed above the capping layer. For example, the morememory cells that are provided and/or the more layers of the memorydevice stack that extend vertically above the capping layer the greaterthe thickness desired for the capping layer. Referring to the example ofFIGS. 6A and 6B, illustrated is a capping dielectric layer 602 formedover the substrate 402. The capping dielectric layer 602 interfaces eachof the vias 420 and the adjacent ILD layer 418.

The method 300 then proceeds to block 312 where an array of memory cellsis formed over the substrate. The array of memory cells may be formedover the peripheral circuit components, described above with referenceto block 304, and over the MLI, vias and capping dielectric layerdescribed above with reference to blocks 306, 208 and 310 respectively.In an embodiment, the array of memory cells includes cells having avertically stacked flash memory device structures in which a pluralityof flash memory cells (e.g. NOR flash memory cells) are formedvertically, that is, in a direction away from the top surface of thesubstrate.

In some embodiments, block 312 includes forming a memory device stackused to form the memory cells. The memory device stack may be repeatedany number of times such as 2, 4, 8, 16, 24, 32, or more dependent uponthe desired array size. For exemplary purposes, the example of FIG. 7Aillustrates 2 cycles of the memory device stack 702 interposed by adielectric layer 704. In some embodiments, the memory device stack 702includes layers suitable for forming source features, drain features,bit line features, source line features, channel regions, and/or otherfeatures of a memory cell. In the illustrated embodiment, the device 400includes source/drain layers 706 for providing a respective one of asource region or a drain region of the memory cells. In an embodiment,the source/drain layers 706 are silicon. In some embodiments, thesource/drain layers 706 are doped (e.g., doped silicon). In someembodiments, the source/drain layers 706 are undoped (e.g., undopedsilicon). In an embodiment, a bottommost layer (adjacent the cappingdielectric layer 602) is a source layer and the next above layer 706 isa drain layer. However, in other embodiments, the function of the layers706 may be reversed. A dielectric layer (e.g., an oxide) 708 is formedinterposing the source/drain layers 706. Again, while illustrated in theexample of the device 400 are vertically stacked flash memory cells, thepresent disclosure may also be applied to other embodiments of memorycells.

In some embodiments, after formation of the memory device stacks 702,trenches 712 are etched in the memory device stacks. In an embodiment,the trenches 712 define a region for a gate structure to be formed. Inan embodiment, a channel region 710 is formed for each cell adjacent thetrenches 712. The channel region 710 may be polysilicon.

In some embodiments, a storage layer is then formed for the memorycells. Referring to the example of FIG. 7A, a storage layer 714 isdeposited on the substrate 406. In an embodiment, the storage layer 714is an ONO storage layer. The ONO storage layer may include anoxide-nitride-oxide configuration such as SiO2-Si3N4-SiO2. The storagelayer 714 functions to trap charges where the current differencesdetected in the cell (e.g., drain current) provide the memory effect.

After formation of the storage layer 714, in some embodiments, aprotection spacer 716 is formed on the device 400. The protection spacer716 may be used to protect the storage layer 714 during subsequentprocesses (e.g., etching as discussed below in block 314). In someembodiments, the protection spacer 716 may be polysilicon. In a furtherembodiment, the protection spacer 716 may be doped or undopedpolysilicon. In an embodiment, the protection spacer 716 is a similarmaterial to that of the gate structure formed as discussed below. Insome embodiments, the protection spacer 716 may be between approximately1 nanometer and approximately 10 nanometers in thickness. In someembodiments, material for the protection spacer 716 is conformallydeposited over the device 400 and then etched back such that it iswithin the trenches 712. The protection spacer 716 may be formed by dryetching.

The method 300 then proceeds to block 314 where an opening is providedto expose the vias, discussed above with respect to block 308. In anembodiment, the bottom of the trenches (e.g., trenches) are opened to,for some trenches, expose the vias. The opening to expose the vias maybe performed using an etching process but without the need for aphotolithography process or using a masking element during the etchingprocess.

Referring to the example of FIG. 8A, a bottom of the trenches 712 isopened by an etching process. In particular, the storage layer 714 andthe protection spacer 716 are removed from a bottom surface of thetrenches 712 (see FIG. 7A) and the trench 712 bottom is etched open.This opening extends the depth of the trench 712 into and through thecapping dielectric layer 602. The trench with an increased depth isdenoted as 712A and is illustrated in FIG. 8A. It is noted that in someembodiments, the creation of the modified trench 712A (including theremoval of the storage layer 714 and the protection spacer 716 from abottom of trench 712) is performed without the need for a lithographystep. In other words, the etching process does not use a maskingelement. The etching process applied may be anisotropic. In anembodiment, the etch has a non-selectivity between the materials to beetched. It is noted that the modified trenches 712A that are alignedwith the vias 420 expose the aligned via 420. However, the modifiedtrenches 712A that are not aligned with the vias 420 (e.g., as the vias420 are at a pitch of 2X that of the trenches 712A) merely extend intothe dielectric layer 418.

The method 300 then proceeds to block 316 where the gate structures ofthe memory cells are formed, which may include filling the openingsexposing the vias, and the overlying trenches, with conductivematerial(s) to form the gate structures. In an embodiment, theconductive material forming the gate structures is polysilicon.Referring to the example of FIG. 9A, the modified trenches 712A havebeen filed with conductive material 902. In an embodiment, theconductive material 902 includes polysilicon. As illustrated in FIG. 9A,the conductive material 902 interfaces and provides an electricalconnection to the vias 420.

As illustrated in FIG. 10A, after deposition of the conductive material902, the method may continue with a recessing of the conductive material902 and/or planarization process of conductive material 902 to form thegate structures 1002 of the memory cells. The gate structures 1002 mayprovide control gate for the memory cells. The gate structure 1002 isformed adjacent the storage layer (ONO) 714.

In some embodiments, the method 300 and the step 316 includes performinga gate isolation process or cut process. In some embodiments, the gatestructure (e.g., polysilicon) discussed above is isolated or cut intoportions. In an embodiment, a masking element or elements (e.g.,photoresist and/or hard mask) are formed to define where the gatestructures are to be cut, separating gate lines of adjacent (e.g., inthe y-direction) memory cells from one another.

Referring to the example of FIGS. 11A and 11B, a masking element 1102 isformed. In an embodiment, the masking element 1102 is patternedphotoresist material. In an embodiment, the openings provided in themasking element 1102 are arranged at a first pitch X and a second pitchY. The first pitch X may be the bit line pitch, or the minimum pitch ofthe memory cells in the x-direction. The second pitch Y may be the wordline pitch, or the minimum pitch of the memory cells in the y-direction.The formation of the masking element may include a plurality of layers,such as a tri-layer photoresist 1100, including the patternedphotoresist material 1102, a middle layer (e.g., silicon containingspin-on coated material), and a bottom layer (e.g., organic spin-oncoated material. After forming the masking element 1102, as illustratedin FIGS. 12A, 12B, and 12C, portions of the gate structures 1002 areremoved underlying the openings of the masking element 1102. Theportions of the gate structures 1002 may be removed by an etchingprocess such as a dry etch process (e.g., plasma enhanced etch) or a wetetching process. Openings 1202 are formed in the gate structures 1002.

The block 316 may further include filling the openings formed by cuttingthe gate lines with insulating material to isolate the two portions ofthe gate structures. Referring to the example of FIGS. 13A, 13B and 13C,an insulating material 1302 is formed over the substrate and in theopenings 1202. In an embodiment, the insulating material 1302 may be anoxide. The formation of insulating material 1302 may include adeposition process (e.g., CVD or other suitable process) followed by aplanarization process.

The method 300 then proceeds to block 318 where an upper interconnectstructure is formed over the memory cells. The formed upper interconnectstructure may be substantially similar to the upper interconnectstructure 210 described above with reference to the device 200 of FIG.2. The upper interconnect structure may include an upper access line(s)for the memory cells and vias interconnecting a portion of the memorycells to this upper access line(s).

Referring to the example of FIGS. 14A, 14B, and 14C, a masking element1402 is formed over the substrate and patterned to form openings 1404 todefine a pattern for vias to provide an interconnection to the memorycells and, in particular, an interconnection to selective ones of thegate structures 1002. The masking element may include a multi-layerstructure such as tri-layer photoresist 1400. As illustrated in FIG.14C, the pitch of the openings 1404 may be approximately Y-pitch in they-direction, and 2*X-pitch in the x-direction. The relaxation of thepitch in the x-direction to 2*X-pitch may be because the vias are onlycoupling to selective ones of the memory cells. In other words, the viasprovide interconnection between an upper access line and a memory cell.Where a cell has been provided an interconnection to the lower accessline (see 416A), the interconnection to the upper access line is notneeded. Therefore, only a portion (e.g., half) of the gate structuresrequire connection to the upper access line and thus, only a portion ofthe gate structures require interconnection to a via above the memorycell to be provided for a gate pick-up.

After forming the masking element 1402, block 318 includes etching thevia openings and filling the vias with conductive material. Referring tothe example of FIGS. 15A, 15B, and 15C, conductive vias 1502 are formedinterfacing select gate structures 1002. For example, conductive vias1502 interface every other memory cell and in particular, every othergate structure 1002 in the x-direction.

The block 318 of the method 300 then proceeds to form an access line(e.g., word line) above the memory cells and connected to the vias.Referring to the example of FIGS. 16A, 16B, and 16C, a metal layer 1602,which may provide access line(s) to the memory cells is formed. In anembodiment, the metal layer 1602 provides an access line that is a wordline (WL). In a further embodiment, the access line 1602 is a word lineprovided to a first set of memory cells (gate structures 1002) and theaccess line 416A is a word line provided to a second set of memorycells. In another embodiment, the metal layer 1602 provides an accessline that is a bit line (BL).

In an embodiment, every other gate structure (in the x-direction) isconnected to the metal layer 1602 providing the access line, and theremaining gate structures are connected to metal layer 416A providingthe access line. In an embodiment, the access lines provided by themetal layers 1602 and 416A provide the same functionality (e.g., bothprovide a word line). The metal layer 1602 and the vias 1502 may includeconductive material such as tungsten (W), molybdenum (Mo), titanium(Ti), cobalt (Co), tantalum (Ta), nickel (Ni), polysilicon, aluminum(Al), copper (Cu), silicides, nitrides, and/or other suitable materialsin one or more layers.

The method 300 may then continue to further fabrication steps includingforming input/output features operable to access the device 400.

Thus, in some embodiments, it can be appreciated that the method 300provides for a method and device that allow for the bottom access lineand connection elements (e.g., access line and above disposed vias) tobe formed prior to the memory cells. The formed bottom access line andconnection elements may be covered with protective capping layer thatcan be subsequently removed in regions of interconnection with elementsof the memory cells (e.g., gate structures). The methods provide in someembodiments, the removal of the capping layer and exposure to the bottomaccess line and connection elements without requiring a photolithographyprocess or difficult etching processes to later form the interconnectionelements. After forming the memory cells, an upper access line isprovided to a portion of the memory cells (e.g., where were not providedinterconnection to the lower access line). As a result, in someembodiments, the memory cell size can be decreased. In some embodiments,the methods may provide for an improved production yield (e.g.,eliminating a photolithography step as discussed above). Further, someembodiments of the method step provide for protection of the storagelayer of the memory cells to be protected from damage.

In one of the broader embodiments discussed herein, a method is providedto fabricate a semiconductor device. The method includes forming atransistor of a peripheral circuit on a substrate and forming a firstinterconnect structure over the transistor. The first interconnectstructure includes a first access line. The method further includesforming a via extending above the first access line. After forming thevia, the method includes forming a plurality of memory cell structuresover the interconnect structure and the via. A second interconnectstructure is formed over the memory cell structure. The secondinterconnect structure includes a second access line. The first accessline is coupled to a first memory cell of the plurality of memory cellstructures and second access line is coupled to a second memory cell ofthe plurality of memory cell structures.

In a further embodiment, the method includes depositing a dielectricprotection layer over the via prior to forming the plurality of memorycell structures. In an embodiment, the first access line is a word lineand the second access line is a word line. In an embodiment, the firstaccess line is a bit line and the second access line is a bit line. Inan embodiment, the method further includes forming the plurality ofmemory cell structures by: forming a memory device stack including asource layer and a drain layer; etching a plurality of openings in thememory device stack; and forming a gate structure in each of theplurality of openings. In a further embodiment, the etching theplurality of openings includes etching a first opening to expose the viaand etching a second opening adjacent the first opening. The secondopening exposes a dielectric material adjacent the via. In anembodiment, forming the gate structure includes depositing polysiliconin the first opening, the polysilicon interfacing the via. In anembodiment, the method may further comprise forming a spacer layer onsidewalls of each of the plurality of openings prior to forming the gatestructure in each of the plurality of openings and/or forming ONOstorage layer on the sidewalls of each of the plurality of openingsprior to forming the spacer layer.

In another of the broader embodiments, a method of fabricating asemiconductor device is provided that includes forming devices of aperipheral circuit on a substrate and forming a first metal layer abovethe devices of the peripheral circuit. A plurality of vias are formed ata first pitch in a first direction and a second pitch in a seconddirection, each of the plurality of vias extending above the first metallayer. A capping layer is deposited over the plurality of vias. Aplurality of memory cells is formed above the capping layer. Theplurality of memory cells have gate structures formed at a third pitchin the first direction. The third pitch is approximately half the firstpitch. The method then includes connecting a first gate structure of theplurality of memory cells to a first via of the plurality of vias.

In a further embodiment, the method includes connecting a second gatestructure of the plurality of memory cells to a second metal layerdisposed above the plurality of memory cells. In an embodiment, thefirst gate structure and the second gate structure are associated withadjacent memory cells of the plurality of memory cells. In anembodiment, the capping layer is SiOC, AlOx, AlN, SiN or SiO2. In anembodiment, the plurality of vias are formed of tungsten. In anembodiment the method further includes forming the plurality of memorycells above the capping layer includes forming a stack of layersproviding source/drain features interposed by dielectric layers. Thegate structures may extend through the stack of layers. In anembodiment, a storage layer interposing each of the gate structures andthe stack of layers.

In another of the broader embodiments a semiconductor memory deviceincludes peripheral circuitry formed over the substrate, a memory cellarray formed over the peripheral circuitry, and a conductive viaextending above the first word line, the first memory cell connected tothe first word line by way of the conductive via. A first memory cell ofthe memory cell array is connected to a first word line between theperipheral circuitry and the memory cell array and a second memory cellof the memory cell array is connected to a second word line disposedabove the memory cell array.

In a further embodiment, a gate structure of the first memory cellinterfaces the conductive via. In an embodiment, the gate structureextends through a dielectric capping layer disposed above the conductivevia and below a source/drain of the first memory cell. In an embodiment,the first memory cell and the second memory cell are flash memory cells.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand the aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of theembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

What is claimed is:
 1. A method to fabricate a semiconductor device,comprising: forming a transistor of a peripheral circuit on a substrate;forming a first interconnect structure over the transistor, wherein thefirst interconnect structure includes a first access line; forming a viaextending above the first access line; after forming the via, forming aplurality of memory cell structures over the interconnect structure andthe via; and forming a second interconnect structure over the memorycell structure, wherein the second interconnect structure includes asecond access line, wherein the first access line is coupled to a firstmemory cell of the plurality of memory cell structures and second accessline is coupled to a second memory cell of the plurality of memory cellstructures.
 2. The method of claim 1, further comprising: depositing adielectric protection layer over the via prior to forming the pluralityof memory cell structures.
 3. The method of claim 1, wherein the firstaccess line is a word line and the second access line is a word line. 4.The method of claim 1, wherein the first access line is a bit line andthe second access line is a bit line.
 5. The method of claim 1, whereinthe forming the plurality of memory cell structures includes: forming amemory device stack including a source layer and a drain layer; etchinga plurality of openings in the memory device stack; and forming a gatestructure in each of the plurality of openings.
 6. The method of claim5, wherein the etching the plurality of openings includes etching afirst opening to expose the via and etching a second opening adjacentthe first opening, wherein the second opening exposes a dielectricmaterial adjacent the via.
 7. The method of claim 6, wherein the formingthe gate structure includes depositing polysilicon in the first opening,the polysilicon interfacing the via.
 8. The method of claim 5, furthercomprising: forming a spacer layer on sidewalls of each of the pluralityof openings prior to forming the gate structure in each of the pluralityof openings.
 9. The method of claim 8, further comprising: forming anONO storage layer on the sidewalls of each of the plurality of openingsprior to forming the spacer layer.
 10. A method of fabricating asemiconductor device, the method comprising: forming devices of aperipheral circuit on a substrate; forming a first metal layer above thedevices of the peripheral circuit; forming a plurality of vias at afirst pitch in a first direction and a second pitch in a seconddirection, each of the plurality of vias extending above the first metallayer; depositing a capping layer over the plurality of vias; forming aplurality of memory cells above the capping layer, wherein the pluralityof memory cells have gate structures formed at a third pitch in thefirst direction, wherein the third pitch is approximately half the firstpitch; and connecting a first gate structure of the plurality of memorycells to a first via of the plurality of vias.
 11. The method of claim10, further comprising: connecting a second gate structure of theplurality of memory cells to a second metal layer disposed above theplurality of memory cells.
 12. The method of claim 11, wherein the firstgate structure and the second gate structure are associated withadjacent memory cells of the plurality of memory cells.
 13. The methodof claim 10, wherein the capping layer is SiOC, AlOx, AlN, SiN or SiO2.14. The method of claim 10, wherein the plurality of vias are formed oftungsten.
 15. The method of claim 10, wherein the forming the pluralityof memory cells above the capping layer includes forming a stack oflayers providing source/drain features interposed by dielectric layers,wherein the gate structures extend through the stack of layers.
 16. Themethod of claim 15, a storage layer interposing each of the gatestructures and the stack of layers.
 17. A semiconductor memory device,comprising: peripheral circuitry formed over the substrate; a memorycell array formed over the peripheral circuitry, wherein a first memorycell of the memory cell array is connected to a first word line betweenthe peripheral circuitry and the memory cell array and a second memorycell of the memory cell array is connected to a second word linedisposed above the memory cell array; and a conductive via extendingabove the first word line, the first memory cell connected to the firstword line by way of the conductive via.
 18. The semiconductor memorydevice of claim 17, wherein a gate structure of the first memory cellinterfaces the conductive via.
 19. The semiconductor memory device ofclaim 18, wherein the gate structure extends through a dielectriccapping layer disposed above the conductive via and below a source/drainof the first memory cell.
 20. The semiconductor memory device of claim17, wherein the first memory cell and the second memory cell are flashmemory cells.